A100N50X4 Overview
The A100N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as an alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS.
A100N50X4 Key Features
- RoHS pliant
- 100 Watts
- 2.7 GHz
- AlN Ceramic
- Non-Nichrome Resistive Element
- Low VSWR
- 100% Tested
- Small Size Resistive Element Substrate Terminal Finish Operating Temperature Thick film AlN Ceramic Matte Tin over Nicke
- 2.7 GHz 1.1:1 to 2.7 GHz
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