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APM2306 - N-Channel MOSFET

Datasheet Details

Part number APM2306
Manufacturer Anpec Electronics
File Size 172.36 KB
Description N-Channel MOSFET
Datasheet download datasheet APM2306 Datasheet

General Description

• 30V/3.5A, RDS(ON)=70mΩ(typ.) @ V =5V GS RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design • High Power and Current Handling Capability • SOT-23 Package Applications • Switching Regulators • Switching Converters D 3 12 GS Top View of SOT-23 Ordering and Marking Information APM2306 H andling C ode Temp.

Range Package Code Package Code A : SOT-23 O perating Junction Tem p.

R ange C : -55 to 1 50°C H andling C ode TR : Tape & Reel APM2306 A : M06X X - Date Code Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS Drain-Source Voltage Gate-Source Voltage 30 V ±20 ID Maximum Pulsed Drain Current ( pulse width ≤ 300µs) IDM Maximum Drain Current – Pulsed 3.5 16 A PD Maximum Power Dissipation TA=25°C TA=100°C 1.25 0.5 W W TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C AcuNsPtEoCmererssetroveosbttahien right to make changes to improve reliability the latest version of relevant information to or manufacturability verify before placing without orders.

Overview

APM2306 N-Channel Enhancement Mode MOSFET.

Key Features

  • Pin.