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Anpec Electronics

APM4542K Datasheet Preview

APM4542K Datasheet

Dual Enhancement Mode MOSFET

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APM4542K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
N-Channel
30V/7A,
R
DS(ON)
=17m(typ.)
@
V
GS
=
10V
RDS(ON) =22m(typ.) @ VGS = 4.5V
www.DataSheet4U.com P-Channel
-30V/-5.5A,
RDS(ON) =35m(typ.) @ VGS =-10V
R
DS(ON)
=51m(typ.)
@
V
GS
=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP 8
(8) (7)
D1 D1
(3)
S2
(4)
G2
(2)
G1
S1 D2 D2
(1) (5) (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4542
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4542 K :
APM4542
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw




Anpec Electronics

APM4542K Datasheet Preview

APM4542K Datasheet

Dual Enhancement Mode MOSFET

No Preview Available !

APM4542K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
www.DataSheet4U.com
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
VGS=±10V
PD* Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
N Channel P Channel
30 -30
±20 ±20
7 -5.5
28 -22
2 -2
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source
Resistance
On-State
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VGS=10V, IDS=7A
N-Ch
VGS=-10V, IDS=-5.5A
VGS=4.5V, IDS=5A
P-Ch
N-Ch
VGS=-4.5V, IDS=-4A
P-Ch
APM4542K
Unit
Min. Typ. Max.
30
V
-30
1
30
µA
-1
-30
1 1.5 2
1 -1.5 -2
V
±100
±100
nA
17 24
35 56
m
22 30
51 78
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw


Part Number APM4542K
Description Dual Enhancement Mode MOSFET
Maker Anpec Electronics
Total Page 13 Pages
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