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Anpec Electronics Coropration

APM4317K Datasheet Preview

APM4317K Datasheet

P-Channel Enhancement Mode MOSFET

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APM4317K
Features
-30V/-9A,
RDS(ON) = 16m(typ.) @ VGS = -10V
R
DS(ON)
=
24m(typ.)
@
V
GS
=
-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
D
D
D
D
S
S
S
G
Top View of SOP8
( 1, 2, 3 )
S SS
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(4)
G
D D DD
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
APM4317
Assembly Material
Handling Code
Temperature Range
Package Code
APM4317 K :
APM4317
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.2 - May., 2009
1
www.anpec.com.tw
Downloaded from Elcodis.com electronic components distributor




Anpec Electronics Coropration

APM4317K Datasheet Preview

APM4317K Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

APM4317K
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
IDa Continuous Drain Current
IDMa
ISa
IARb
EARb
TJ
TSTG
Pulsed Drain Current
Diode Continuous Forward Current
Avalanche Current
Repetitive Avalanche Energy (L=0.3mH)
Maximum Junction Temperature
Storage Temperature Range
TA=25°C
TA=70°C
VGS=-10V
-30
±25
-9
-7.3
-30
-2.2
-20
65
150
-55 to 150
V
A
mJ
°C
PDa Maximum Power Dissipation
TA=25°C
TA=70°C
2.5
W
1.6
RθJAa,c Thermal Resistance-Junction to Ambient
t 10s
50 °C/W
RθJL Thermal Resistance-Junction to Lead
Steady State
25 °C/W
Note a : Surface Mounted on 1in2 pad area, t 10sec.
Note b : UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c : Maximum under Steady State conditions is 75 °C/W.
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)d Drain-Source On-state Resistance
Diode Characteristics
VSDd Diode Forward Voltage
trre Reverse Recovery Time
Qrre Reverse Recovery Charge
Test Conditions
APM4317K
Min. Typ. Max.
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±25V, VDS=0V
VGS=-10V, IDS=-9A
VGS=-4.5V, IDS=-7.2A
-30
-
-
-1
-
-
-
--
- -1
- -30
-1.8 -2.5
- ±100
16 20
24 32
ISD=-2.2A, VGS=0V
- -0.7 -1.1
- 22 -
ISD=-9A, dlSD/dt=100A/µs
-
13
-
Unit
V
µA
V
nA
m
V
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. A.2 - May., 2009
2
www.anpec.com.tw
Downloaded from Elcodis.com electronic components distributor


Part Number APM4317K
Description P-Channel Enhancement Mode MOSFET
Maker Anpec Electronics Coropration
Total Page 11 Pages
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