5C6408-20 Description
302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For flexibility in high-speed memory applications, Austin Semiconductor offers dual chip enables (CE1, CE2) and output enable (OE) capability.
5C6408-20 Key Features
- High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
- Battery Backup: 2V data retention
- High-performance, low-power CMOS double-metal process
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE1 and CE2
- All inputs and outputs are TTL patible
- Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack
- 12 -15 -20 -25 -35 -45 -55- -70
5C6408-20 Applications
- Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT