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Austin Semiconductor
Austin Semiconductor

AS28C010 Datasheet Preview

AS28C010 Datasheet

128K x 8 EEPROM EEPROM Memory

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AS28C010 pdf
Austin Semiconductor, Inc.
EEPROM
AS28C010
128K x 8 EEPROM
EEPROM Memory
5 Volt, Byte Alterable
AVAILABLE AS MILITARY
SPECIFICATIONS
z SMD 5962-38267
z MIL-PRF-38535
FEATURES
z Access speed: 120, 150, 200, and 250ns
z Data Retention: 100 Years
z Low power, active current: 50mA, standby current: 500uA
z Single +5V (+10%) power supply
z Data Polling and Toggle
z Erase/Write Endurance (10,000 byte mode / 100,000 page
mode)
z Software Data protection Algorithm
z Automatic , Self-Timed Byte Write
z Automatic Programming:
Automatic Page Write: 10ms (MAX)
OPTIONS
MARKINGS
z Timing
120ns access
-12
150ns access
-15
200ns access
-20
250ns access
-25
z Packages
Ceramic Flat Pack
F
CerDIP, 600 mil
www.DaztaOSpheereat4tiUn.gcoTmemperature Ranges
CW
-Military (-55oC to +125oC)
XT
-Industrial (-40oC to +85oC)
IT
-Full Military Class M Processing 883C
*NOTE: Package lid is connected to ground (Vss).
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O 0 1 3
I/O 1 1 4
I/O 2 1 5
Vss 1 6
3 2 Vcc
31 WE\
3 0 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
2 2 CE\
2 1 I/O 7
2 0 I/O 6
1 9 I/O 5
1 8 I/O 4
1 7 I/O 3
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS28C010 is capable of in system
electrical Byte and Page reprogrammability.
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make its
erase and write operations faster. The AS28C010 features Data
Polling and a toggle signal to indicate completion of erase and program-
ming operations.
This EEPROM provides several levels of data protection., in
addition to noise protection on the WE signal and write inhibit during
power on and off. Software data protection is implemented using
JEDEC
Optional
Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles in
the Page Mode and 10,000 cycles in the Byte Mode.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1



Austin Semiconductor
Austin Semiconductor

AS28C010 Datasheet Preview

AS28C010 Datasheet

128K x 8 EEPROM EEPROM Memory

No Preview Available !

AS28C010 pdf
Austin Semiconductor, Inc.
EEPROM
AS28C010
FUNCTIONAL BLOCK DIAGRAM
www.DataSheet4U.com
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number AS28C010
Description 128K x 8 EEPROM EEPROM Memory
Maker Austin Semiconductor
Total Page 14 Pages
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