• Part: MT5C2561
  • Manufacturer: Austin Semiconductor
  • Size: 120.36 KB
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MT5C2561 Key Features

  • High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS dou
  • Single +5V (+10%) Power Supply
  • Easy memory expansion with CE
  • All inputs and outputs are TTL patible
  • Timing 35ns access 45ns access 55ns access 70ns access
  • Package(s) Ceramic DIP (300 mil) Ceramic LCC
  • 35 -45 -55- -70
  • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT
  • 2V data retention/low power L

Other MT5C2561 Datasheets

Manufacturer Part Number Description
Micron Logo Micron Technology MT5C2561 256K x 1 SRAM

View all MT5C2561 datasheets →

MT5C2561 Description

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design.

MT5C2561 Applications

  • Electrical characteristics identical to those provided for the 45ns access devices