1N5712 Description
/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode...
1N5712 Key Features
- Low Turn-On Voltage As Low as 0.34 V at 1 mA
- Pico Second Switching Speed
- High Breakdown Voltage Up to 70 V
- Matched Characteristics Available
- 65°C to +200°C 5082-2835
- 250 mW 5082-2835
- 150 mW Peak Inverse Voltage
- Dumet Lead Finish
- 95-5% Tin-Lead Max. Soldering Temperature
- 260°C for 5 sec Min. Lead Strength