High Gain, High Linearity, Very Low Noise Amplifier
Avago Technologies’ MGA-13216 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 Pm GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 1.5 GHz to 2.5
GHz. For optimum performance at lower frequency from
400 MHz to 1.5 GHz, the MGA-13116 is recommended.
Both MGA-13216 & MGA-13116 share the same package
and pinout configuration.
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm3 16-lead QFN
Pin 2 Vbias
1 Pin 3 RFinQ1
Pin 10 RFoutQ2
2 Pin 11 RFoutQ2
Pin 13 RFinQ2
Pin 16 RFoutQ1
All other pins NC
– Not Connected
x Optimum frequency of operation 1.5 GHz – 2.5 GHz
x Very low noise figure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology
x Low cost small package size: 4.0 x 4.0 x 0.85 mm3
1.95 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 122 mA (typ)
x 0.61 dB Noise Figure
x 35.8 dB Gain
x 46 dB RFoutQ1 to RFinQ2 Isolation
x 40.5 dBm Output IP3
x 23.6 dBm Output Power at 1dB gain compression
x Low noise amplifier for cellular infrastructure including
GSM, CDMA, and W-CDMA.
x Other very low noise applications.
Package marking provides orientation and identification
“13216” = Device Part Number
“YYWW” = Work Week and Year of Manufacture
“XXXX” = Lot Number
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.