BL10N80 Description
Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS 800 V ID 10 A RDS(ON).Typ 0.72.
BL10N80 Key Features
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product