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BL8596 - LDO mode OVP

General Description

The BL8596 is Li+ charger IC with integrated PMOSFET.

The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range.

Key Features

  • A Built-In P-MOSFET.
  • LDO mode makes CHRIN voltage stable around 5.5V.
  • Range of operation input voltage: Max 15V.
  • Charging current up to 1A.
  • Environment Temperature: -20C~85C.

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Datasheet Details

Part number BL8596
Manufacturer BELLING
File Size 556.82 KB
Description LDO mode OVP
Datasheet download datasheet BL8596 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BL8596 LDO mode OVP with Integrated P-MOSFET DESCRIPTION The BL8596 is Li+ charger IC with integrated PMOSFET. The device is fabricated with advanced CMOS technology to achieve maintaining low static power dissipation over a very broad VCC operating range. The BL8596 integrates a P-MOSFET and Schottky diode which is normally a discrete device employed for conventional battery charging design of mobile phone system. In addition to that, BL8596 works like a LDO mode to keep CHRIN voltage stable when ACIN goes high. And thus it will not trigger the CHRIN pin over-voltage protection when ACIN voltage increased to as high as 15V. FEATURES  A Built-In P-MOSFET  LDO mode makes CHRIN voltage stable around 5.