BLS65R165 - Power MOSFET

Description

BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance.

The transistor is suitable device for SMPS, high speed switching and general purpose applications.

Features

Fast Switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS product.

BELLING

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Datasheet Details

Part number	BLS65R165
Manufacturer	BELLING
File Size	586.90 KB
Description	Power MOSFET
Datasheet	BLS65R165 Datasheet
Additional preview pages of the BLS65R165 datasheet.

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BLS65R165 Power MOSFET 1．Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 700 V ID 24 A RDS(ON).Typ 0.

Published: Mar 1, 2022 |