Datasheet Summary
Power MOSFET
1．Description
BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
VDS@Tj.max
RDS(ON).Typ
0.135 Ω
Features
- Fast Switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
APPLICATIONS
- High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes Package
BLS65R165-P
TO-220
BLS65R165-A
TO-220F
BLS65R165-I
TO-262
BLS65R165-B
TO-263
BLS65R165-W...