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BL Galaxy

2SA1036 Datasheet Preview

2SA1036 Datasheet

Silicon Epitaxial Planar Transistor

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BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Larg e IC.ICMAX. =-500mA.
Pb
Lead-free
z Low VCE(sat). Ideal for low-voltage operation.
Production specification
2SA1036
APPLICATIONS
z Ideal for low-voltage operation.
ORDERING INFORMATION
Type No.
Marking
2SA1 036
HP ,HQ,HR
S OT-23
Package Code
SOT -23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol Parameter
Value
VCBO
Collector-Base Voltage
-40
VCEO
Collector-Emitter Voltage
-32
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-500
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSTC012
Rev.A
www.galaxycn.com
1
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BL Galaxy

2SA1036 Datasheet Preview

2SA1036 Datasheet

Silicon Epitaxial Planar Transistor

No Preview Available !

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SA1036
Parameter S
ymbol Test conditions
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0 -5
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
Transition frequency
fT
VCB=-20V,IE=0
VEB=-4V,IC=0
VCE=-3V,IC=-10mA 82
IC=-100mA, IB=-10mA
VCE=-5V, IC=-20mA
f=100MHz
MIN TYP MAX UNIT
V
V
V
-1 μA
-1 μA
390
-0.4 V
200 MHz
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz 7
pF
CLASSIFICATION OF h FE(1)
Rank P
Range 82-1
80
Q
120-270
R
180-390
Document number: BL/SSSTC012
Rev.A
www.galaxycn.com
2


Part Number 2SA1036
Description Silicon Epitaxial Planar Transistor
Maker BL Galaxy
Total Page 4 Pages
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