․High frequency current gain ․High speed switching ․Small output capacitance ․Low collector saturation voltage
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D. C. ) Collector Current (Pulse).
Power Dissipation Junction Temperature Storage Temperature Range.
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A1206. For precise diagrams, tables, and layout, please refer to the original PDF.
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2SA1206 PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
On special request, these transistors can be manufactured in different pin configurations.
Features ․High frequency current gain ․High speed switching ․Small output capacitance ․Low collector saturation voltage
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D.C.) Collector Current (Pulse)* Power Dissipation Junction Temperature Storage Temperature Range *PW≦2ms, Duty Cycle≦50%
Symbol -VCBO -VCEO -VEBO
-IC -IC Ptot Tj TS
Value 15 15 4.
A1206 Datasheet
