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BLUE ROCKET ELECTRONICS

2N3904 Datasheet Preview

2N3904 Datasheet

Silicon NPN transistor

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2N3904
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
低电流,低电压。
Low current, Low voltage.
用途 / Applications
用于一般放大。
General purpose amplifier.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Collector
PIN 2Base PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
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BLUE ROCKET ELECTRONICS

2N3904 Datasheet Preview

2N3904 Datasheet

Silicon NPN transistor

No Preview Available !

2N3904
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
60
40
6.0
200
625
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=10μA
IE=0
VCEO IC=1.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=10μA
IC=0
Collector Cut-Off Current
ICBO VCB=50V
IE=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=1.0V
VCE=1.0V
VCE(sat) IC=50mA
IC=10mA
IC=100mA
IB=5.0mA
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
VBE(sat)
fT
Cob
Ton
Toff
IC=50mA IB=5.0mA
IC=10mA VCE=20V
f=100MHz
VCB=5.0V IE=0
f=1.0MHz
VCC=3.0V VBE=0.5V
IC=10mA IB1=1.0mA
VCC=3.0V IC=10mA
IB1=-IB2=1.0mA
最小值 典型值 最大值 单位
Min Typ Max Unit
60 V
40 V
6.0 V
0.05 μA
0.05 μA
100 300
30
0.3 V
0.95 V
300 MHz
4.0 pF
0.07 μs
0.25 μs
http://www.fsbrec.com
2/6


Part Number 2N3904
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
Total Page 6 Pages
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