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BLUE ROCKET ELECTRONICS

2N6131 Datasheet Preview

2N6131 Datasheet

Silicon NPN transistor

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2N6131
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.

特征 / Features
开关速度快。
Fast switching time.
用途 / Applications
应用于线性中功率,快速开关切换。
Medium power linear, fast switching applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/5




BLUE ROCKET ELECTRONICS

2N6131 Datasheet Preview

2N6131 Datasheet

Silicon NPN transistor

No Preview Available !

2N6131
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC(TC=25)
Tj
Tstg
DATA SHEET
数值
Rating
100
80
5.0
7.0
10.0
50
150
-55150
单位
Unit
V
V
V
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCEO IC=100mA IB=0
VCBO IC=1mA
IE=0
Emitter to Base Breakdown Voltage VEBO IE=1mA
Ic=0
Collector Cut-Off Current
ICBO VCB=80V
IE=0
Collector Cut-Off Current
ICEO VCE=80V
IB=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=4.0V
VCE=4.0V
VCE(sat) IC=6.0A
IC=3.0A
IC=5.0A
IB=1.0A
Base to Emitter On Voltage
VBE(on) IC=6.0A
VCE=4.0V
Transition Frequency
fT IC=1.0A
VCE=4.0V
最小值 典型值 最大值 单位
Min Typ Max Unit
100 V
80 V
5.0 V
0.1 mA
1.0 mA
1.0 mA
10 100
5.0
1.5 V
2.0 V
3.0 MHz
http://www.fsbrec.com
2/5


Part Number 2N6131
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
PDF Download

2N6131 Datasheet PDF






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