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2SD2118 Datasheet Preview

2SD2118 Datasheet

Silicon NPN transistor

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2SD2118(BR3DA2118D)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions
TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.
特征 / Features
hFE 线性好,饱和压降低,与 2SB1412(BR3CA1412D)互补。
Excellent hFE linearity, low VCE(sat), complements the 2SB1412(BR3CA1412D).
用途 / Applications
用于闪光灯驱动,中功率放大。
Strobe flash applications, medium power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
Q
R
hFE Range
120270
180390
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

2SD2118 Datasheet Preview

2SD2118 Datasheet

Silicon NPN transistor

No Preview Available !

2SD2118(BR3DA2118D)
Rev.C Feb.-2015
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC(Ta=25)
PC(TC=25)
Tj
Tstg
DATA SHEET
数值
Rating
50
20
6.0
5.0
10
1.0
10
150
-55150
单位
Unit
V
V
V
A
mA
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
VCBO
VCEO
IC=50μA
IC=1.0mA
IE=0
IB=0
Emitter to Base Breakdown Voltage VEBO IE=50μA
IC=0
Collector Cut-Off Current
ICBO VCB=40V
IE=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector output capacitance
hFE VCE=2.0V
VCE(sat)
fT
Cob
IC=4.0A
VCE=6.0V
f=100MHz
VCE=20V
f=1.0MHz
IC=0.5A
IB=0.1A
IC=50mA
IC=0
最小值 典型值 最大值 单位
Min Typ Max Unit
50 V
20 V
6.0 V
0.5 μA
0.5 μA
120 390
0.25 1.0 V
150 MHz
30 pF
http://www.fsbrec.com
2/6


Part Number 2SD2118
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
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2SD2118 Datasheet PDF






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