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BLUE ROCKET ELECTRONICS

2SD880 Datasheet Preview

2SD880 Datasheet

Silicon NPN transistor

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2SD880
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.

特征 / Features
直流电流增益高,饱和压降低,集电极耗散功率大,与 2SB834 互补。
High DC current gain, low saturation voltage, high power dissipation, complementary to 2SB834.
用途 / Applications
用于音频功率放大。
Audio frequency power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
O
60120
Y
100200
GR
150300
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

2SD880 Datasheet Preview

2SD880 Datasheet

Silicon NPN transistor

No Preview Available !

2SD880
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
PC(TC=25)
Tj
Tstg
DATA SHEET
数值
Rating
60
60
7.0
3.0
0.5
1.5
30
150
-55150
单位
Unit
V
V
V
A
A
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Turn-On Time
Turn-On Time
Storage Time
Fall Time
符号
Symbol
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
ton
tstg
tf
测试条件
Test Conditions
IC=50mA IB=0
VCB=60V
VEB=7.0V
VCE=5.0V
IE=0
IC=0
IC=0.5A
IC=3.0A
IB=0.3A
VCE=5.0V
VCE=5.0V
VCB=10V
f=1.0MHz
IC=0.5A
IC=0.5A
IE=0
IB1=-IB2=0.2A
最小值 典型值 最大值 单位
Min Typ Max Unit
60 V
100 μA
100 μA
60 300
0.25 1.0 V
0.7 1.0 V
3.0 MHz
70 pF
0.8 μS
1.5 μS
0.8 μS
http://www.fsbrec.com
2/6


Part Number 2SD880
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
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2SD880 Datasheet PDF






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