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3CD1375 - SILICON PNP TRANSISTOR

Features

  • Low V ,CE(sat) High PC, complementary pair with 2SD2012(3DD2012). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -7.0 V IC -3 A IB -0.5 A PC (Ta=25℃) 2W PC (Tc=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=-60V IE=0 VEB=-7.0V IC=0 IC=-50mA IB=0 VCE=-5.0V IC=-0.5A VCE=-5.0V IC=-2.0A IC=-2.0A IB=-0.2A VCE =-5.0V IC =-0.5A.

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Datasheet Details

Part number 3CD1375
Manufacturer BLUE ROCKET ELECTRONICS
File Size 215.69 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CD1375 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1375(3CD1375) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio frequency power amplifier applications. :，； 2SD2012(3DD2012)。/Features: Low V ,CE(sat) High PC, complementary pair with 2SD2012(3DD2012). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -7.0 V IC -3 A IB -0.5 A PC (Ta=25℃) 2W PC (Tc=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=-60V IE=0 VEB=-7.0V IC=0 IC=-50mA IB=0 VCE=-5.0V IC=-0.5A VCE=-5.0V IC=-2.0A IC=-2.0A IB=-0.2A VCE =-5.0V IC =-0.5A VCE=-5.0V IC=-0.5A VCB=-10V IE=0 f=1MHz Min -60 100 15 Rating Typ -1.0 -0.75 9 50 Max -10 -10 320 -1.5 -1.
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