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BLUE ROCKET ELECTRONICS

3CD910 Datasheet Preview

3CD910 Datasheet

Silicon PNP transistor

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3CD910
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126F Plastic Package.

特征 / Features
饱和压降小,hFE 高且线性好。
Low saturation voltage, excellent hFE linearity and high hFE.
用途 / Applications
用于一般音频放大及低电压调整电路.。
Audio frequency amplifier, low voltage regulator.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1Emitter
PIN 2Collector
PIN 3Base
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
O
100200
Y
200400
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

3CD910 Datasheet Preview

3CD910 Datasheet

Silicon PNP transistor

No Preview Available !

3CD910
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(TC=25)
Tj
Tstg
DATA SHEET
数值
Rating
-30
-30
-5.0
-3.0
1.25
10
150
-55150
单位
Unit
V
V
V
A
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector Cut-Off Current
ICBO VCB=-30V IE=0
Emitter Cut-off Current
IEBO VEB=-5.0V IC=0
DC Current Gain*
Collector to Emitter Saturation
Voltage*
Base to Emitter Saturation
Voltage*
Gain-Bandwidth Product
hFE*
VCE(sat)*
VBE(sat)*
fT
VCE=-3.0V
IC=-1.5A
IC=-1.5A
VCE=-5.0V
f=1.0MHz
IC=-0.5A
IB=-0.15A
IB=-0.15A
IC=-0.5A
*脉冲测试:脉宽≤300μS,占空比≤2.0%。
*pulse test: pulse width300μS,duty cycle2.0%.
最小值 典型值 最大值 单位
Min Typ Max Unit
-10 μA
-10 μA
100 400
-1.0 V
-2.0 V
5.0 MHz
http://www.fsbrec.com
2/6


Part Number 3CD910
Description Silicon PNP transistor
Maker BLUE ROCKET ELECTRONICS
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3CD910 Datasheet PDF





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