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BLUE ROCKET ELECTRONICS

3CG5610 Datasheet Preview

3CG5610 Datasheet

Silicon PNP transistor

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3CG5610
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92LM 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92LM Plastic Package.
特征 / Features
饱和压降小,与 3DG5609 互补。
Low saturation voltage, complementary pair with 3DG5609.
用途 / Applications
功率放大,功率开关及电子自动调速器。
Power amplifier and switching electronic application, governor applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
123
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
B
60150
C
120240
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

3CG5610 Datasheet Preview

3CG5610 Datasheet

Silicon PNP transistor

No Preview Available !

3CG5610
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-25
-20
-5.0
-1.0
900
150
-55150
单位
Unit
V
V
V
A
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
VCBO
VCEO
VEBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE(sat)
Base to Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Collector output capacitance
Cob
测试条件
Test Conditions
IC=-10μA IE=0
IC=-1.0mA IB=0
IE=-10μA
VCB=-25V
VEB=-5.0V
VCE=-2.0V
VCE=-2.0V
IC=-800mA
IC=-800mA
VCE=-2.0V
VCB=-10V
f=1.0MHz
IC=0
IE=0
IC=0
IC=-0.5A
IC=-1.0A
IB=-80mA
IB=-80mA
IC=-500mA
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
-25 V
-20 V
-5.0 V
-1.0 μA
-1.0 μA
60 240
30
-0.5 V
-1.2 V
80 MHz
15 pF
http://www.fsbrec.com
2/6


Part Number 3CG5610
Description Silicon PNP transistor
Maker BLUE ROCKET ELECTRONICS
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3CG5610 Datasheet PDF






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