8050W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
5.0
1.5
0.5
200
150
-55～150
单位
Unit
V
V
V
A
A
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V
IE=0
Emitter Base Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
hFE(3) VCE=1.0V IC=5.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA IB=80mA
Base-Emitter Saturation Voltage
VBE(sat) IC=800mA IB=80mA
Collector-Emitter Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Output Capacitance
fT VCE=10V IC=50mA
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
25 V
6.0 V
0.1 μA
0.1 μA
85 300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 190
MHz
9.0 pF
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