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BLUE ROCKET ELECTRONICS

BR3CA1370F Datasheet Preview

BR3CA1370F Datasheet

Silicon PNP transistor

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2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.
特征 / Features
饱和压降低,直流电流放大线性好。
Low saturation voltage, excellent DC current gain characteristics.
用途 / Applications
用于音频功率放大。
Audio frequency power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
E
100200
F
160320
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

BR3CA1370F Datasheet Preview

BR3CA1370F Datasheet

Silicon PNP transistor

No Preview Available !

2SB1370(BR3CA1370F)
Rev.C Feb.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current – Continuous(Pulse)
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC (Tc=25)
Tj
Tstg
数值
Rating
-60
-60
-5.0
-3.0
-6.0
2.0
30
150
-55150
单位
Unit
V
V
V
A
A
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown Voltage
符号
Symbol
VCBO
VCEO
VEBO
测试条件
Test Conditions
IC=-50μA
IC=-1.0mA
IE=-50μA
最小值 典型值 最大值 单位
Min Typ Max Unit
-60 V
-60 V
-5.0 V
Collector Cut-Off Current
ICBO VCB=-60V IE=0
-10 μA
Emitter Cut-Off Current
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
IEBO VEB=-4.0V
VCE(sat) IC=-2.0A
VBE(sat) IC=-2.0A
IC=0
IB=-200mA
IB=-200mA
-10 μA
-1.5 V
-1.5 V
DC Current Gain
Transition Frequency
Collector output capacitance
hFE VCE=-5.0V IC=-500mA 100
320
fT
VCE=-5.0V IE=50mA
f=5.0MHz
15 MHz
Cob
VCB=-10V
f=1.0MHz
IE=0
80 pF
http://www.fsbrec.com
2/6


Part Number BR3CA1370F
Description Silicon PNP transistor
Maker BLUE ROCKET ELECTRONICS
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