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BLUE ROCKET ELECTRONICS

BRD4N70 Datasheet Preview

BRD4N70 Datasheet

N-CHANNEL MOSFET

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BRD4N70
Rev.E May.-2016
DATA SHEET
描述 / Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
该器件适用于适配器和充电器的功率开关电路
These devices are well suited for power switch circuit of adaptor and charger.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
PIN1G
4
PIN 2D
PIN 3S
PIN 4D
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/7




BLUE ROCKET ELECTRONICS

BRD4N70 Datasheet Preview

BRD4N70 Datasheet

N-CHANNEL MOSFET

No Preview Available !

BRD4N70
Rev.E May.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
DATA SHEET
参数
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient
符号
Symbol
VDS
ID(Tc=25)
ID(Tc=100)
IDM
VGS
EAS
PD
Tj
Tstg
RθJC
RθJA
数值
Rating
700
4.0
3.2
16
±30
150
70
150
-55~150
1.79
62.5
单位
Unit
V
A
A
A
V
mJ
W
/W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Forward Transconductance
Gate-Body Leakage Current
Forward
Static Drain-Source
On-Resistance
Input Capacitance
Turn-Off Delay Time
符号
Symbol
BVDSS
ΔBVDSS
/ΔTj
VGS(th)
IDSS
gFS
测试条件
Test Conditions
VGS=0V
ID=250μA
ID=250uA
Referenced to25
VGS=VDS
VDS=700V
Tj=25
VDS=560V
Tj=125
VDS=15V
ID=250μA
VGS=0V
VGS=0V
ID=2.0A
IGSS VGS=±30V
RDS(on)
Ciss
td(off)
VGS=10V ID=2.0A
VGS =0V
VDS=25V
VF=1.0MHZ
VDD=350V ID=4.0A
RG=25
最小值 典型值 最大值 单位
Min Typ Max Unit
700 V
0.6 V/
2.0 4.0 V
10 μA
100 μA
3.5 S
±10 uA
2.5 2.8
520 pF
45 ns
http://www.fsbrec.com
2/7


Part Number BRD4N70
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 7 Pages
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