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BRD60R850 Datasheet Preview

BRD60R850 Datasheet

N-CHANNEL MOSFET

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BRD60R850
Rev.D May.-2016
DATA SHEET
描述 / Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
600V 超结功率场效应管.优值 RDS(on)×Qg 很低、100%雪崩测试、符合 RoHS
600V Super-Junction Power MOSFET. Very Low RDS(on)×Q g,100%avalanche tested, RoHS
compliant.
用途 / Applications
用于开关模式电源、不间断电源、功率因数校正。
Switch Mode Power Supply, Uninterruptible Power SupplyPower Factor Correction s.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
4
PIN1G
PIN 2D
PIN 3S
PIN 4D
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/9




BLUE ROCKET ELECTRONICS

BRD60R850 Datasheet Preview

BRD60R850 Datasheet

N-CHANNEL MOSFET

No Preview Available !

BRD60R850
Rev.D May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Drain-Source Voltage
Drain Current
Drain Current - Pulsed(note1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(note2)
Repetitive Avalanche Energy(note1)
Avalanche Current(note1)
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Junction and Storage Temperature Range
符号
Symbol
VDSS
ID
IDM(note1)
VGS
EAS(note2)
EAR(note1)
IAR(note1)
PD
RθJA
RθJC
Tj Tstg
数值
Rating
600
5
20
±30
67.5
34
1
65
62
1.9
-55150
单位
Unit
V
A
A
V
mJ
mJ
A
W
/ W
/ W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Forward Transconductance(note3)
Static Drain-Source
On-Resistance(note3)
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符号
Symbol
VDSS
IDSS
IGSS
VGS(th)
gfs
RDS(on)
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
测试条件
Test Conditions
VGS=0V
VDS=600V
TJ= 25
VDS=480V
TJ=150
ID=250μA
VGS=0V
VGS=0V
VGS=±30V VDS=0V
VDS=VGS
VDS=40V
ID=250μA
ID=2.5A
VGS=10V
TJ= 25ºC
VGS= 0V
ID=2.5A
ISD=3A
VDS=25V
f=1.0MHz
VGS=0V
VDD=300V ID=3A
RG=25
最小值 典型值 最大值
Min Typ Max
600
1.0
10
±100
2.5
8
4.5
0.77 0.85
1.5
320
75
4
18
40
50
30
单位
Unit
V
μA
nA
V
S
V
pF
ns
http://www.fsbrec.com
2/9


Part Number BRD60R850
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 9 Pages
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