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BLUE ROCKET ELECTRONICS

BRD640 Datasheet Preview

BRD640 Datasheet

N-CHANNEL MOSFET

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BRD640
Rev.D May.-2016
DATA SHEET
描述 / Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高效 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
PIN1G
4
PIN 2,4D
PIN 3S
放大及印章代码 / hFE Classifications & Marking
见印章说明。 See Marking Instructions.
http://www.fsbrec.com
1/9




BLUE ROCKET ELECTRONICS

BRD640 Datasheet Preview

BRD640 Datasheet

N-CHANNEL MOSFET

No Preview Available !

BRD640
Rev.D May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
符号
数值
Parameter
Symbol
Rating
Drain-Source Voltage
VDSS
200
Drain Current
ID(Tc=25)
18
Drain Current
ID(Tc=100)
11.2
Pulsed Drain Current Note1
IDM 72
Gate-Source Voltage
VGSS
±20
Single Pulsed Avalanche Energy Note2
EAS 500
Repetitive Avalanche Energy
Avalanche Current Note1
EAR 13.9
IAR 10
Total Power Dissipation
PD 186
Junction and Storage Temperature Range
TJ,TSTG
-55 to 150
Junction-to-Case
RθJC
0.74
Junction-to-Ambient
Notes:
RθJA
48.19
1Repetitive rating; pulse width limited by maximum junction temperature
2L=10.0mH, ID=10A, Start TJ=25
单位
Unit
V
A
A
A
V
mJ
mJ
A
W
/W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符号
Symbol
BVDSS
IDSS
测试条件
Test Conditions
VGS=0V
ID=250μA
VDS=200V VGS=0V
VDS=160V TC=125
IGSS VGS=±20V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V
ID=10.8A
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V
IS=10.8A
VDS=25V
f=1.0MHz
VGS=0V
VDD=100V ID=18A
RG=10
VGS=10V
最小值 典型值 最大值 单位
Min Typ Max Unit
200 V
1 μA
100 μA
±0.1 μA
2.0 4.0 V
0.14 0.18
1.5 V
1685
pF
121 pF
6.4 pF
24.5 ns
24 ns
49.6 ns
11.2 ns
http://www.fsbrec.com
2/9


Part Number BRD640
Description N-CHANNEL MOSFET
Maker BLUE ROCKET ELECTRONICS
Total Page 9 Pages
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