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BRF12N65 - N-Channel MOSFET

Key Features

  • Low gate charge，Low Crss，Fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.6 A IDM 48 A VGSS ±30 V EAS 880 mJ EAR 25 mJ IAR 12 A RθJC 2.45 ℃/W RθJA 62.5 ℃/W PD 51 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VGS=0V IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=6A gFS VDS=40V ID=6A VSD VGS=0V.

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Datasheet Details

Part number BRF12N65
Manufacturer BLUE ROCKET ELECTRONICS
File Size 253.37 KB
Description N-Channel MOSFET
Datasheet download datasheet BRF12N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BRF12N65(CS12N65F) N-Channel MOSFET/N MOS : ，，UPS 。 Purpose: High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS. :,,。 Features: Low gate charge，Low Crss，Fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.6 A IDM 48 A VGSS ±30 V EAS 880 mJ EAR 25 mJ IAR 12 A RθJC 2.45 ℃/W RθJA 62.5 ℃/W PD 51 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VGS=0V IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=6A gFS VDS=40V ID=6A VSD VGS=0V IS=12A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=12A RG=25Ω tf Min 650 3.0 Typ 0.