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BRG10N120D - Insulated-Gate Bipolar Transistor

General Description

TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Key Features

  • ，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage. /.

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Datasheet Details

Part number BRG10N120D
Manufacturer BLUE ROCKET ELECTRONICS
File Size 755.84 KB
Description Insulated-Gate Bipolar Transistor
Datasheet download datasheet BRG10N120D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.  / Features ，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage. / Applications 。 Eddy-current heating. / Equivalent Circuit / Pinning 1 2 3 PIN1：Gate PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BRG10N120D Rev.D Oct.