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BRG60N65D - Insulated-Gate Bipolar Transistor

General Description

TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.

Key Features

  • , , ，,RoHS 。 Built in fast recovery diode, Saturation voltage positive temperature coefficient, High reliability and thermal stability parameters, good agreement, RoHS product. /.

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Datasheet Details

Part number BRG60N65D
Manufacturer BLUE ROCKET ELECTRONICS
File Size 1.93 MB
Description Insulated-Gate Bipolar Transistor
Datasheet download datasheet BRG60N65D Datasheet

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Full PDF Text Transcription (Reference)

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BRG60N65D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features , , ，,RoHS 。 Built in fast recovery diode, Saturation voltage positive temperature coefficient, High reliability and thermal stability parameters, good agreement, RoHS product. / Applications , , 。 General purpose inverter, Frequency converters, Uninterrupted Power Supply(UPS). / Equivalent Circuit / Pinning 1 2 3 PIN1：Gate PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1 / 10 BRG60N65D Rev.D Oct.