BT151
Rev.D Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Non-repetitive peak on-state current
I2t for fusing
Repetitive rate of rise of on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
(Over any 20 ms period)
Operating Junction Temperature
Storage Temperature Range
Thermal resistance junction to ambient
Thermal resistance junction to mounting base
符号
Symbol
VDRM
VRRM
IT(AV)
IT(RMS)
ITSM(t=10ms)
ITSM(t=8.3ms)
I2t(t=10ms)
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-mb)
电性能参数 / Electrical Characteristics(Ta=25℃)
-500R
500
数值
Rating
-650R
650
7.5
12
100
110
50
50
2
5
5
5
0.5
125
-40~150
60
1.3
-800R
800
单位
Unit
V
A
A
A
A
A2S
A/μs
A
V
V
W
W
℃
℃
K/W
K/W
参数
Parameter
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Gate controlled turn-on
time
符号
Symbol
IGT
IL
IH
VT
VGT
ID,IR
tgt
测试条件
Test Conditions
VD=12V
IT=0.1A
VD=12V
IGT=0.1A
VD=12V
IGT=0.1A
IT=23A
VD=12V
IT=0.1A
VD=VDRM(max)
Tj=125℃
VD=VDRM(max)
Tj=125℃
ITM=40A
dIg/dt=5A/μs
IT=0.1A
VR=VRRM(max)
VD=VDRM IG=0.1A
最小值
Min
0.25
典型值
Typ
2
10
7
1.4
0.6
0.4
最大值
Max
15
40
20
1.75
1.5
0.1 0.5
2
单位
Unit
mA
mA
mA
V
V
mA
μs
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