C106
Rev.D Oct.-2015
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Average on-state current
Non-repetitive peak on-state
current
I2t for fusing
Peak gate power
Peak Average power
Peak gate current
Junction Temperature
Storage Temperature Range
符号
Symbol
VDRM,
VRRM
IT(RMS)
IT(AV)
ITSM
I2t
PGM
PG(AV)
IGM
Tj
Tstg
测试条件
Test Conditions
RGK=1K
TC=-40 to 110℃
C106B
C106D
C106M
TC=80℃
TC=80℃
1/2 Cycle, Sine Wave,60Hz,
TJ=+110℃
t=8.3ms
TC=80℃
TC=80℃
TC=80℃
DATA SHEET
数值
Rating
200
400
600
4
2.55
20
1.65
500
100
0.2
-40~+110
-40~+150
单位
Unit
V
A
A
A
A2S
mW
mW
A
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Repetitive peak off-state
current
On-state voltage
Gate trigger current
Gate trigger voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
符号
Symbol
IDRM,
IRRM
VTM
IGT
VGT
IH
IL
dv/dt
测试条件
Test Conditions
VAK=Rated VDRM or Tc =25℃
VRRM
RGK=1KΩ
Tc=+110℃
ITM=4.0A
tp=380uS
最小值 典型值 最大值
Min Typ Max
10
100
2.2
单位
Unit
μA
V
VAK=6.0Vdc
RL=100Ω
Tc =25℃
Tc=-40℃
15 200
μA
35 500
VAK=6.0Vdc
RL=100Ω
Tc =25℃
Tc =-40℃
0.4 0.60 0.80
0.5 0.75 1.00
V
VAK=12.0Vdc
RGK=1KΩ
Tc =25℃
Tc =-40℃
Tc=+110℃
0.19 3.0
0.33 6.0
0.07 2.0
mA
VAK=12.0Vdc
IG=20mA
Tc =25℃
Tc =-40℃
VAK=Rated VDRM, RGK=1KΩ
TC=110℃
0.20 5.0
0.35 7.0
mA
8.0 V/us
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