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BLUE ROCKET ELECTRONICS

KSD362 Datasheet Preview

KSD362 Datasheet

Silicon NPN transistor

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KSD362
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.

特征 / Features
C-B 电压高(VCBO=150V),集电极电流大(IC=5A)。
High Collector-Base Voltage, High Collector Current.

用途 / Applications
用于黑白电视机的行偏转输出。
B/W TV horizontal deflection output.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12 3
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
N
2050
R
4080
O
70140
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

KSD362 Datasheet Preview

KSD362 Datasheet

Silicon NPN transistor

No Preview Available !

KSD362
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC(TC=25)
Tj
Tstg
DATA SHEET
数值
Rating
150
70
8.0
5.0
40
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
VCBO IC=1.0mA IE=0
VCEO IC=2.0mA RBE=
Emitter to Base Breakdown Voltage VEBO IE=1.0mA IC=0
Collector Cut-Off Current
ICBO VCB=100V IE=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE VCE=5.0V
VCE(sat) IC=5.0A
IC=5.0A
IB=0.5A
Base to Emitter Saturation Voltage VBE(sat) IC=5.0A
IB=0.5A
Transition Frequency
fT VCE=5.0V IC=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
150 V
70 V
8.0 V
20 μA
20 140
1.0 V
1.5 V
10 MHz
http://www.fsbrec.com
2/6


Part Number KSD362
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
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KSD362 Datasheet PDF





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