MCR100T
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
Peak Repetitive Off-State
Voltage
RMS on-state current
Non-repetitive peak on-state
current
I2t for fusing
Peak gate power
Average gate power
Peak gate current
Peak Gate Voltage – Reverse
Junction Temperature
Storage Temperature Range
符号
Symbol
VDRM，
VRRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGRM
Tj
Tstg
测试条件
Test Conditions
Tj=-40 to 110℃,Sine Wave,
50 to 60Hz,Gate Open
MCR 100T-3
MCR 100T-4
MCR 100T-6
MCR 100T-8
Tc=80℃
1/2 Cycle, Sine Wave,60Hz,
Tj=25℃
t=8.3ms
TA=25℃,Pulse Width≤1.0μs
TA=25℃
t=8.3ms
TA=25℃,Pulse Width≤1.0μs
TA=25℃,Pulse Width≤1.0μs
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
单位
Unit
100
200
400
600
0.8
10
0.415
100
100
1.0
5.0
-40～110
-40～150
V
A
A
A2S
mW
mW
A
V
℃
℃
参数
Parameter
符号
Symbol
Repetitive peak off-state IDRM
current
IRRM
On-state voltage
Gate trigger current
VTM
IGT
Holding current
IH
Latching current
IL
Gate trigger voltage
Critical rate of rise of
off-state voltage
Critical Rate of Rise of
On-State Current
VGT
dv/dt
di/dt
测试条件
Test Conditions
VD=Rated VDRM and
VRRM,RGK=1KΩ
Tc=25℃
Tc=+110℃
最小值 典型值 最大值
Min Typ Max
10
100
单位
Unit
μA
ITM=1.0A peak @ TA=25℃
VAK=7.0Vdc RL=100Ω TC=25℃
VAK=7.0Vdc
Initiating
Current=20mA
Tc=25℃
Tc=-40℃
1.7 V
40 200 μA
0.5 5.0
mA
10
VAK=7.0V
Ig=200μA
Tc =25℃
Tc=-40℃
0.6 10
mA
15
Tc=25℃
VAK=7.0Vdc,RL=100Ω Tc=-40℃
VD=Rated VDRM,
Exponential Waveform,
RGK=1KΩ
Tj=110℃
IPK=20A;
IGT=20mA
PW=10usec;
diG/dt=1A/usec;
0.62 0.8
1.2
V
20 35
- V/us
50 A/us
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