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BLUE ROCKET ELECTRONICS

NJW0281G Datasheet Preview

NJW0281G Datasheet

Silicon NPN transistor

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NJW0281G
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-3P Plastic Package.

特征 / Features
用于 100W 高保真音频功率输出,与 NJW0302G 互补。无卤产品。
Recommend for 100W high fidelity audio frequency amplifier output stage, Complementary to
NJW0302G.HF Product.
用途 / Applications
用于一般功率放大。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
http://www.fsbrec.com
1/6




BLUE ROCKET ELECTRONICS

NJW0281G Datasheet Preview

NJW0281G Datasheet

Silicon NPN transistor

No Preview Available !

NJW0281G
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICp
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
230
230
5
15
30
1.5
150
150
-55150
单位
Unit
V
V
V
A
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
符号
Symbol
测试条件
Test Conditions
VCBO IC=50mA IE=0
ICBO
IEBO
hFE(1)
hFE(2)
VCB=230V
VEB=5.0V
VCE=5.0V
VCE=5.0V
IE=0
IC=0
IC=1.0A
IC=7.0A
VCE(sat) IC=8.0A
IB=0.8A
VBE VCE=5.0V IC=7.0A
fT IC=1.0A
VCE=5.0V
Cob
VCB=10V
f=1.0MHz
IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
230 V
5 μA
5 μA
55 160
35 60
0.4 3.0 V
1.0 1.5 V
30 MHz
200 pF
http://www.fsbrec.com
2/6


Part Number NJW0281G
Description Silicon NPN transistor
Maker BLUE ROCKET ELECTRONICS
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NJW0281G Datasheet PDF






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