SMBJ120A Datasheet | Bourns

Features n Ro HS pliant- n Surface Mount SMB package n Standoff Voltage: 5 to 495 volts n Power Dissipation: 600 watts Applications n IEC 61000-4-2 ESD (Min. Level 4) n IEC 61000-4-4 EFT n IEC 61000-4-5 Surge SMBJ Transient Voltage Suppressor Diode Series General Information The markets of portable munications, puting and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic ponents. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in pact chip package DO-214AA (SMB) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Agency Recognition Description File Number: E153537 Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Value Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM Steady State Power Dissipation @ TL = 75 °C PM(AV) Maximum Instantaneous Forward Voltage @ IPP = 50 A SMBJ5.0A ~ SMBJ90A (For Unidirectional Units Only) SMBJ100A ~ SMBJ495A 3.5 5.0 Operating Temperature Range -55 to +150 Storage Temperature Range TSTG -55 to +150 1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. 2. Thermal Resistance Junction to Lead. 3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). Unit...