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B15N10F Datasheet

N-Channel 100-V (D-S) MOSFET

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B15N10D/F
N-Channel 100-V (D-S) MOSFET
General Description
B15N10D/F combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for
boost converters and synchronous rectifiers for
consumer,telecom, industrial power supplies and
LED backlighting.
Features
RDS(ON)=105m@VGS=10V
High Density Cell Design for Low RDS(ON)
Exceptional On-Resistance and
Maximum DC Current
TO-252-3/TO-220F-3 Package
Pin Configuration
D
G
Applications
LED backlight
LCD monitor
LCD TV
DC/DC Converter
Load Switch
S GDS
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJC
N-Channel
100
±20
15
14
50
3
83
53
-55 to 150
1.5
Unit
V
V
A
A
A
W
/W
Confidential material for authorized user only and BiTEK
reserves the utmost right upon the information contained herein.
www.BiTEK.com.tw



Part Number B15N10F
Description N-Channel 100-V (D-S) MOSFET
Maker BiTEK
Total Page 1 Pages
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