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2SA1020 Datasheet Preview

2SA1020 Datasheet

PNP Silicon Epitaxial Transistor

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2SA1020 PNP Silicon Epitaxial Transistor
Power amplifier application
Power switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
50
50
5
2
900
150
- 55 to + 150
Unit
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 0.5 A
at -VCE = 2 V, -IC = 1.5 A
Current Gain Group O hFE
70
- 140 -
Y hFE
120
-
240
-
hFE 40
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
-ICBO
-
-
1 µA
-IEBO
-
-
1 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
50
-
-
V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 0.05 A
Base Emitter Saturation Voltage
at -IC = 1 A, -IC = 0.05 A
Transition Frequency
at -VCE = 2 V, -IC = 0.5 A
-VCE(sat)
-VBE(sat)
fT
-
-
-
- 0.5 V
- 1.2 V
100 - MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob - 40 - pF
Page 1 of 2
7/15/2011
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2SA1020 Datasheet Preview

2SA1020 Datasheet

PNP Silicon Epitaxial Transistor

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Page 2 of 2
7/15/2011
Free Datasheet http://www.Datasheet4U.com


Part Number 2SA1020
Description PNP Silicon Epitaxial Transistor
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2SA1020 Datasheet PDF






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