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BM2300 - N-Channel Enhancement Mode MOSFET

General Description

The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number BM2300
Manufacturer Bookly
File Size 291.44 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BM2300 Datasheet

Full PDF Text Transcription for BM2300 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BM2300. For precise diagrams, and layout, please refer to the original PDF.

BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell densi...

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t mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5V z 20V/4.5A, RDS(ON) = 34

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