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BDW24C Datasheet Preview

BDW24C Datasheet

PNP Transistor

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BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW23, BDW23A, BDW23B and BDW23C
50 W at 25°C Case Temperature
6 A Continuous Collector Current
Minimum hFE of 750 at 2 A, 3 V
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDW24
BDW24A
BDW24B
BDW24C
BDW24
BDW24A
BDW24B
BDW24C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-6
-0.2
50
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
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Bourns

BDW24C Datasheet Preview

BDW24C Datasheet

PNP Transistor

No Preview Available !

www.DataSheet4U.com
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
Emitter cut-off
IEBO current
Forward current
hFE
transfer ratio
VCE(sat)
VBE(sat)
VBE(on)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -100 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VEB = -5 V
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -8 mA
IB = -60 mA
IB = -8 mA
VCE = -3 V
VCE = -3 V
IE = -2 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -1 A
IC = -2 A
IC = -6 A
IC = -2 A
IC = -6 A
IC = -2 A
IC = -1 A
IC = -6 A
IB = 0
(see Note 3)
BDW24
BDW24A
BDW24B
BDW24C
BDW24
BDW24A
BDW24B
BDW24C
BDW24
BDW24A
BDW24B
BDW24C
-45
-60
-80
-100
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
750
100
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2
20000
-2
-3
-2.5
-2.5
-3
-1.8
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff
Turn-off time
IC = -3 A
VBE(off) = 4.5 V
IB(on) = -12 mA
RL = 10
IB(off) = 12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
2
DataSheet4 U .com
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.



Part Number BDW24C
Description PNP Transistor
Maker Bourns
Total Page 3 Pages
PDF Download

BDW24C Datasheet PDF





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