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BDW94A Datasheet Preview

BDW94A Datasheet

PNP SILICON POWER DARLINGTONS

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BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW93, BDW93A, BDW93B and BDW93C
80 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum hFE of 750 at 3V, 5 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-12
-0.3
80
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
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Bourns

BDW94A Datasheet Preview

BDW94A Datasheet

PNP SILICON POWER DARLINGTONS

No Preview Available !

www.DataSheet4U.com
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW94
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -100 mA IB = 0
(see Note 3)
BDW94A
-60
BDW94B
-80
BDW94C
-100
VCB = -40 V IB = 0
BDW94
-1
ICEO
Collector-emitter
cut-off current
VCB = -60 V
VCB = -80 V
IB = 0
IB = 0
BDW94A
-1
BDW94B
-1
VCB = -80 V IB = 0
BDW94C
-1
VCB = -45 V IE = 0
BDW94
-0.1
VCB = -60 V IE = 0
BDW94A
-0.1
VCB = -80 V IE = 0
BDW94B
-0.1
ICBO
Collector cut-off
current
VCB = -100 V
VCB = -45 V
IE = 0
IE = 0
TC = 150°C
BDW94C
BDW94
-0.1
-5
VCB = -60 V IE = 0
TC = 150°C
BDW94A
-5
VCB = -80 V IE = 0
TC = 150°C
BDW94B
-5
VCB = -100 V IE = 0
TC = 150°C
BDW94C
-5
Emitter cut-off
IEBO current
VEB = -5 V IC = 0
-2
Forward current
hFE
transfer ratio
VCE(sat)
VBE(sat)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -20 mA
IB = -100 mA
IB = -20 mA
IB = -100 mA
IE = -5 A
IE = -10 A
IC = -3 A
IC = -10 A
IC = -5 A
IC = -5 A
IC = -10 A
IC = -5 A
IC = -10 A
IB = 0
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
-2
-3
-2.5
-4
-2
-4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
2
DataSheet4 U .com
PRODUCT INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.



Part Number BDW94A
Description PNP SILICON POWER DARLINGTONS
Maker Bourns
Total Page 3 Pages
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BDW94A Datasheet PDF





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