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TIP120 Datasheet

NPN SILICON POWER DARLINGTONS

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TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
TIP125, TIP126 and TIP127
65 W at 25°C Case Temperature
5 A Continuous Collector Current
Minimum hFE of 1000 at 3 V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIP120
60
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
TEEmitter-base voltage
Continuous collector current
EPeak collector current (see Note 1)
Continuous base current
LContinuous device dissipation at (or below) 25°C case temperature (see Note 2)
OContinuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
SOperating junction temperature range
Storage temperature range
OBLead temperature 3.2 mm from case for 10 seconds
TIP121
TIP122
TIP120
TIP121
TIP122
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
80
100
60
80
100
5
5
8
0.1
65
2
50
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1




Bourns

TIP120 Datasheet Preview

TIP120 Datasheet

NPN SILICON POWER DARLINGTONS

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TIP120, TIP121, TIP122
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperatur e
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
TIP120
TIP121
TIP122
60
80
100
ICEO
Collector-emitter
cut-off current
ICBO
IEBO
Collector cut-off
current
Emitter cut-off
current
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IC = 0
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
0.5
0.5
0.5
0.2
0.2
0.2
2
hFE
VCE(sat)
VBE
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
VCE = 3 V
VCE = 3 V
IB = 12 mA
IB = 20 mA
VCE = 3 V
IC = 0.5 A
IC = 3 A
IC = 3 A
IC = 5 A
IC = 3 A
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
1000
(see Notes 5 and 6)
2
4
2.5
Parallel diode
VEC forward voltage
IE = 5 A
IB = 0
(see Notes 5 and 6)
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Ethermal characteristics
ETRθJC
LRθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX
1.92
62.5
Oresistive-load-switching characteristics at 25°C case temperature
SPARAMETER
Bton Turn-on time
Otoff Turn-off time
IC = 3 A
VBE(off) = -5 V
TEST CONDITIONS
IB(on) = 12 mA
RL = 10
IB(off) = -12 mA
tp = 20 µs, dc 2%
MIN TYP MAX
1.5
8.5
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
UNIT
V
mA
mA
mA
V
V
V
UNIT
°C/W
°C/W
UNIT
µs
µs
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.


Part Number TIP120
Description NPN SILICON POWER DARLINGTONS
Maker Bourns
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TIP120 Datasheet PDF






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