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Bourns Electronic Solutions

BDW93C Datasheet Preview

BDW93C Datasheet

NPN SILICON POWER DARLINGTONS

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BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
80 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum hFE of 750 at 3V, 5 A
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TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
45
60
80
100
45
60
80
100
5
12
0.3
80
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1




Bourns Electronic Solutions

BDW93C Datasheet Preview

BDW93C Datasheet

NPN SILICON POWER DARLINGTONS

No Preview Available !

BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW93
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BDW93A
BDW93B
60
80
BDW93C
100
ICEO
Collector-emitter
cut-off current
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ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
VCB = 40 V
VCB = 60 V
VCB = 80 V
VCB = 80 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
0.1
0.1
0.1
0.1
5
5
5
5
2
Forward current
hFE transfer ratio
VCE(sat)
VBE(sat)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 20 mA
IB = 100 mA
IB = 20 mA
IB = 100 mA
IE = 5 A
IE = 10 A
IC = 3 A
IC = 10 A
IC = 5 A
IC = 5 A
IC = 10 A
IC = 5 A
IC = 10 A
IB = 0
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
2
3
2.5
4
2
4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.


Part Number BDW93C
Description NPN SILICON POWER DARLINGTONS
Maker Bourns Electronic Solutions
Total Page 5 Pages
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