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BUV47A Datasheet Preview

BUV47A Datasheet

NPN SILICON POWER TRANSISTORS

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BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
B
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-emitter voltage (VBE = -2.5 V)
RATING
Collector-emitter voltage (RBE = 10 )
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 5 ms, duty cycle 2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
VCEX
VCER
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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Bourns Electronic Solutions

BUV47A Datasheet Preview

BUV47A Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

www.DataSheet4U.com
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 200 mA L = 25 mH
(see Note 2)
BUV47
BUV47A
400
450
Base-emitter
V(BR)EBO breakdown voltage
IE = 50 mA IC = 0
(see Note 3)
7 30
ICES
Collector-emitter
cut-off current
ICER
Collector-emitter
cut-off current
IEBO
Emitter cut-off
current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VEB = 5 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
RBE = 10
RBE = 10
RBE = 10
RBE = 10
IC = 0
TC = 125°C
TC = 125°C
TC = 125°C
TC = 125°C
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
0.15
0.15
1.5
1.5
0.4
0.4
3.0
3.0
1
VCE(sat)
VBE(sat)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
IB = 1 A IC = 5A
IB = 2.5 A IC = 8A
IB = 1 A IC = 5A
(see Notes 3 and 4)
(see Notes 3 and 4)
1.5
3.0
1.6
Current gain
ft
bandwidth product
VCE = 10 V IC = 0.5 A
f = 1 MHz
8
Cob Output capacitance VCB = 20 V IC = 0
f = 0.1 MHz
105
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
V
mA
mA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn on time
ts Storage time
tf Fall time
IC = 5 A
VCC = 150 V
IB(on) = 1 A
IB(off) = -1 A
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.0 µs
3.0 µs
0.8 µs
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
tsv Voltage storage time IC = 5 A
tfi Current fall time
TC = 100°C
TEST CONDITIONS
IB(on) = 1 A
VBE(off) = -5 V
(see Figures 3 and 4)
MIN TYP MAX UNIT
4.0 µs
0.4 µs
2
DataSheet4 U .com
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.


Part Number BUV47A
Description NPN SILICON POWER TRANSISTORS
Maker Bourns Electronic Solutions
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BUV47A Datasheet PDF






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