BUV47A - NPN SILICON POWER TRANSISTORS

This page provides the datasheet information for the BUV47A, a member of the BUV47 NPN SILICON POWER TRANSISTORS family.

Bourns Electronic Solutions

📥 Download Datasheet

Datasheet Details

Part number	BUV47A
Manufacturer	Bourns Electronic Solutions
File Size	315.19 KB
Description	NPN SILICON POWER TRANSISTORS
Datasheet	BUV47A Datasheet
Additional preview pages of the BUV47A datasheet.

📁 Similar Datasheet

BUV47A - SILICON POWER TRANSISTOR (SavantIC)
BUV47A - NPN Transistor (INCHANGE)
BUV47AFI - NPN Transistor (INCHANGE)
BUV47 - SILICON POWER TRANSISTOR (SavantIC)
BUV47 - NPN Transistor (INCHANGE)
BUV47B - NPN Transistor (INCHANGE)
BUV47B - SILICON POWER TRANSISTOR (SavantIC)
BUV41 - Silicon NPN Power Transistor (Inchange Semiconductor)
BUV42 - SILICON NPN SWITCHING TRANSISTOR (ST Microelectronics)
BUV42 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by Bourns Electronic Solutions

BUV47 - NPN SILICON POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● ● ● Rugged Triple-Diffused Planar Construction 9 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.

Published: Nov 3, 2006 |