events (CDE), lightning and other induced voltage surges.
Key Features
integrated low capacitance compensation diodes
that reduce the typical capacitance to 1.0pF per line. This combined
with low leakage current, means signal integrity is preserved in high-
speed.
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UDD32C08L01 Electrostatic Discharged Protection Devices (ESD) Data Sheet Description The UDD32C08L01 of transient voltage suppressors are designed to protect low voltage,...
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of transient voltage suppressors are designed to protect low voltage, state-of-the- art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The device is constructed using EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon avalanche diode processes. The device features integrated low capacitance compensation diodes that reduce the typical capacitance to 1.0pF per line.
UDD32C08L01 Datasheet
