BS616LV2016
BS616LV2016 is Very Low Power CMOS SRAM manufactured by Brilliance Semiconductor.
Very Low Power CMOS SRAM 128K X 16 bit
Pb-Free and Green package materials are pliant to Ro HS
BS616LV2016 n Features
Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption :
VCC = 3.0V Operation current : 30m A (Max.) at 55ns 2m A (Max.) at 1MHz
Standby current : 0.1u A (Typ.) at 25 OC
VCC = 5.0V Operation current : 62m A (Max.) at 55ns 8m A (Max.) at 1MHz
Standby current : 0.6u A (Typ.) at 25OC Ÿ High speed access time :
-55 55ns(Max.) at VCC=3.0~5.5V -70 70ns(Max.) at VCC=2.7~5.5V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL patible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.5V n POWER CONSUMPTION n DESCRIPTION
The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with typical CMOS standby current of 0.1u A at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616LV2016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2016 is available in DICE form, JEDEC standard 44-pin TSOP II package and 48-ball BGA package.
PRODUCT FAMILY
OPERATING TEMPERATURE
STANDBY
(ICCSB1, Max)
VCC=5.0V VCC=3.0V
BS616LV2016DC BS616LV2016EC mercial +0OC to +70OC
6.0u A
0.7u A
POWER DISSIPATION
1MHz
VCC=5.0V 10MHz
Operating
(ICC, Max) f Max.
1MHz
VCC=3.0V 10MHz
7m A 39m A 60m A 1.5m A 14m A
PKG TYPE f Max.
29m A
DICE TSOP II-44
BS616LV2016AI...
