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MS10N80 - N-Channel MOSFET

General Description

The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Originative New Design.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 46nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) : 1.10 Ω (Typ. ) @VGS=10V.
  • 100% Avalanche Tested.
  • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol.

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Datasheet Details

Part number MS10N80
Manufacturer Bruckewell
File Size 955.96 KB
Description N-Channel MOSFET
Datasheet download datasheet MS10N80 Datasheet

Full PDF Text Transcription for MS10N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MS10N80. For precise diagrams, and layout, please refer to the original PDF.

MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggediz...

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ing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 46nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 1.10 Ω (Typ.