MS10N80 Description
The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.
MS10N80 Key Features
- Originative New Design
- Very Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Unrivalled Gate Charge : 46nC (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V
- 100% Avalanche Tested
- RoHS pliant package Packing &