900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Bruckewell

MS13N50 Datasheet Preview

MS13N50 Datasheet

N-Channel MOSFET

No Preview Available !

MS13N50
500V N-Channel MOSFET
Description
The MS13N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
100% EAS Test
Extended Safe Operating Area
RoHS compliant package
Application
Electronic lamp ballasts
based on half bridge topology
PFC (Power Factor Correction)
SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current Pulsed
EAS Avalanche Energy
EAR Repetitive Avalanche Energy
Power Dissipation (TC=25°C)
PD
Power Dissipation (TC=100°C)
Value
500
±30
13
8
52
803
19.5
195
1.56
Unit
V
V
A
A
A
mJ
mJ
W
W/°C
Publication Order Number: [MS13N50]
© Bruckewell Technology Corporation Rev. A -2014




Bruckewell

MS13N50 Datasheet Preview

MS13N50 Datasheet

N-Channel MOSFET

No Preview Available !

MS13N50
500V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TJ/TSTG
Operating Junction and Storage Temperature
Note:
1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Value
-55 to +175
Thermal Resistance Characteristics
Symbol
Parameter
Rthjc
RθJA
Typical thermal resistance
Typ.
--
--
Max.
0.64
62.5
Static Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID = 250μA
BVDSS /TJ
ID = 250μA, Referenced to 25°C
VGS VDS = VGS, ID = 250μA
GFS VDS = 40 V, ID = 6.5A
IDSS
VDS = 500 V , VGS = 0 V
VDS = 400 V , VGS = 0 V , Tj= 125°C
IGSS VGS = ±30
*RDS(ON)
VGS = -10 V , ID = 6.5 A
Min Typ.
500 --
-- 0.50
2.0
-- --
-- --
-- 3.8
Unit
°C
Units
°C/W
Max.
--
--
4.0
15
1
10
±100
4.8
Units
V
V/°C
V
S
uA
nA
Ω
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDS = 400 V,ID = 13 A,
VGS = 10 V
Qgd
td(on)
tr
td(off)
VDS = 250 V, ID = 13 A,
RG = 25 Ω
tf
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Min Typ. Max. Units
-- 43 56 nC
-- 7.5 10 nC
-- 18.5 24 nC
-- 25 57.5 ns
-- 100 220 ns
-- 130 273 ns
-- 100 220 ns
--
1580
2054
pF
-- 180 234 pF
-- 20 28 pF
Source-Drain Diode Characteristics
Symbol
Test Conditions
IS
ISM
Publication Order Number: [MS13N50]
Min Typ. Max. Units
-- -- 13
A
-- -- 52
© Bruckewell Technology Corporation Rev. A -2014


Part Number MS13N50
Description N-Channel MOSFET
Maker Bruckewell
Total Page 8 Pages
PDF Download

MS13N50 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MS13N50 N-Channel MOSFET
Bruckewell





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy