Datasheet4U Logo Datasheet4U.com

MS20N04NE - P-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Features

  • Low rDS(on) provides higher efficiency and extends battery life.
  • High power and current handling capability.
  • Low side high current DC-DC Converter.

📥 Download Datasheet

Datasheet Details

Part number MS20N04NE
Manufacturer Bruckewell
File Size 179.06 KB
Description P-Channel MOSFET
Datasheet download datasheet MS20N04NE Datasheet

📁 Similar Datasheet

  • MS20001 - Hinge / Butt / Structural / Extruded (Genuine Aircraft)
  • MS20001 - STRUCTURAL EXTRUDED HINGE (AVIAQUIP)
  • MS20001P - Hinge / Butt / Structural / Extruded (ETC)
  • MS20004 - (MS20004 - MS20008) Diameter / Head Size / Lengths (Genuine Aircraft)
  • MS20004 - MS20004 - MS20014 (ETC)
  • MS20005 - (MS20004 - MS20008) Diameter / Head Size / Lengths (Genuine Aircraft)
  • MS20005 - MS20004 - MS20014 (ETC)
  • MS20006 - (MS20004 - MS20008) Diameter / Head Size / Lengths (Genuine Aircraft)
  • MS20006 - MS20004 - MS20014 (ETC)
  • MS20007 - (MS20004 - MS20008) Diameter / Head Size / Lengths (Genuine Aircraft)
Other Datasheets by Bruckewell

Full PDF Text Transcription

Click to expand full text
Preliminary MS20N04NE P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Published: |