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MS8N50 - N-Channel MOSFET

Description

low on-resistance and cost effectiveness.

Features

  • BVDSS=550V typically @ Tj=150°C.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MS8N50
Manufacturer Bruckewell
File Size 367.48 KB
Description N-Channel MOSFET
Datasheet download datasheet MS8N50 Datasheet

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Full PDF Text Transcription

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MS8N50 N-Channel Enhancement Mode Power MOSFET Description The MS8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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