MS8N50 mosfet equivalent, n-channel mosfet.
* BVDSS=550V typically @ Tj=150°C
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS com.
Features
* BVDSS=550V typically @ Tj=150°C
* Low On Resistance
* Simple Drive Requirement
* Low Gate.
The MS8N50 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
comm.
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