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MS9N20E - Dual N-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low rDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe.
  • DFN2X5 6PP saves board space.
  • Fast switching speed.
  • High performance trench technology Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS9N20E] © Bruckewell Technology Corporation Rev. A -2014 MS9N20E Dual N-Channel 20-V (D-S) MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Paramet.

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Datasheet Details

Part number MS9N20E
Manufacturer Bruckewell
File Size 625.66 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet MS9N20E Datasheet

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Full PDF Text Transcription

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MS9N20E Dual N-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe • DFN2X5 6PP saves board space • Fast switching speed • High performance trench technology Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS9N20E] © Bruckewell Technology Corporation Rev.
Published: |